Optically pumped tunable VCSEL employing geometric isolation

ABSTRACT

An optically pumped tunable VCSEL swept source module has a VCSEL and a pump, which produces light to pump the VSCEL, wherein the pump is geometrically isolated from the VCSEL. In different embodiments, the pump is geometrically isolated by defocusing light from the pump in front of the VCSEL, behind the VCSEL, and/or by coupling the light from the pump at an angle with respect to the VCSEL. In the last case, angle is usually less than 88 degrees. There are further strategies for attacking pump noise problems. Pump feedback can be reduced through (1) Faraday isolation and (2) geometric isolation. Single frequency pump lasers (Distributed feedback lasers (DFB), distributed Bragg reflector lasers (DBR), Fabry-Perot (FP) lasers, discrete mode lasers, volume Bragg grating (VBG) stabilized lasers can eliminate wavelength jitter and amplitude noise that accompanies mode hopping.

RELATED APPLICATIONS

This application is a Continuation of U.S. patent application Ser. No.16/409,272, filed on May 10, 2019, which claims the benefit under 35 USC119(e) of U.S. Provisional Application No. 62/670,423, filed on May 11,2018, both of which are incorporated herein by reference in theirentirety.

BACKGROUND OF THE INVENTION

MEMS (Micro electro-mechanical systems) tunable VCSELs (Vertical cavitysurface emitting lasers) are useful in optical coherence tomography(OCT) because of their tuning speed, large coherence length [1,2,3], andlack of coherence revival artifacts [4]. While VCSELs at many wavelengthbands are possible, most work to date has occurred in the 1550 nanometer(nm) [5,6,7], 850 nm [8], 1310 nm [9,10,11,12]; and 1060 nm [9,10,13,14]wavelength bands. The 1550 band is useful in optical telecommunications,as well as the 850 and 1310 nm lasers. The 1310 and 1060 bands arepopular for use in OCT. The 1060 band, in particular, is of interestbecause of applications in ophthalmology, including imaging of theretina [14] and in biometry (distance measurement of structures in thewhole eye) [14]. The 850 nm band is also interesting for ophthalmologybecause of the transparency of water in that range and compatibilitywith silicon photodetectors.

Optically pumped MEMS tunable VCSELs generally have a wider tuning rangethan electrically pumped ones [2,9,13]. In optical pumping, pump laserlight is used to power the VCSEL. Pump light absorbed in the VCSEL isthen reemitted at a longer wavelength as tunable VCSEL light.

Optical pumping, however, presents the challenge of exciting the VCSELwith a low noise pump laser light, Generally, the RIN (relativeintensity noise) of the pump is transferred to the VCSEL light. Pumplasers can be noisy because of (1) fundamental RIN [15], (2) modehopping in Fabry-Perot lasers, or (3) because of feedback of pump lightreflected back from the VCSEL destabilizing the pump.

SUMMARY OF THE INVENTION

There are several ways of attacking these pump noise problems. Pumpfeedback can be reduced through (1) Faraday isolation and (2) geometricisolation. Single frequency pump lasers (Distributed feedback lasers(DFB), distributed Bragg reflector lasers (DBR), discrete mode lasers[16,17], volume Bragg grating (VBG) stabilized lasers [18,19,20] caneliminate wavelength jitter and amplitude noise that accompanies modehopping.

Eliminating wavelength changes or uncertainty in the pump light is alsoimportant for other reasons. Optics with wavelength dependenttransmission in the path to the VCSEL can convert optical frequencyshifts into pump power changes (FM-to-AM conversion). This can happenwith noise, also. Wavelength jitter can be converted to effective pumppower noise.

Shaping and controlling noise, such as through laser pumps brought intocoherence collapse [21,22] are potentially useful. Instead of narrowingthe emission pump bandwidth to a single cavity mode, another method ofobtaining low noise is to use a super-luminescent light emitting diode(SLED) which is a broad band emitter. Since RIN≈1/Δν [23], the RIN goesdown in proportion to the emission bandwidth [23].

In terms of pump noise, 1060 nanometer VCSELs present a special problem.This is because they are typically pumped in the 750-850 nm wavelengthrange where Faraday isolators are large, heavy, and expensive.

As an alternative to isolation based on Faraday rotators, geometricisolation ideas presented here can at least reduce and possibly preventoptical feedback from the VCSEL to the pump laser. These solutions areparticularly useful in miniature bulk optical packages where the VCSEL,and possibly a SOA (semiconductor optical amplifier) and/or pump areintegrated into one hermetic package (co-packaged). This is alsoapplicable where just the VCSEL and a WDM (wavelength divisionmultiplexor) filter formed by a dichroic mirror are co-packaged.

Moreover, while the following description concerns noise control in 1060nanometer VCSELs, this approach can be applied to other VCSELwavelengths as well.

In general, according to one aspect, the invention features an opticallypumped tunable VCSEL swept source module, comprising a VCSEL, and a pumpfor producing light to pump the VSCEL, wherein the pump is geometricallyisolated from the VCSEL.

In different embodiments, the pump is geometrically isolated bydefocusing light from the pump in front of the VCSEL, behind the VCSEL,and/or by coupling the light from the pump at an angle with respect tothe VCSEL. In the last case, angle is usually less than 80 degrees.

The pump can be a VBG or FBG stabilized laser, a discrete mode laser, aDFB laser, and/or DBR laser.

The pump could also be a super luminescent diode (SLED).

The module can further comprise an integrated dichroic

It can also include an SOA and/or possibly an integrate pump chip. Anisolator is also useful to isolate the VCSEL from back reflections fromthe SOA.

In general, according to another aspect, the invention features a methodfor optically pumping a VCSEL. This method comprises producing pumplight with a pump source, coupling the pump light into the VCSEL fromthe pump source, and preventing the pump light from being coupled backinto the pump source by geometric isolation.

In some embodiments, the pump source is geometrically isolated bydefocusing, by focusing pump light in front of the VCSEL or by focusingpump light behind the VCSEL.

The pump source can also be geometrically isolated by coupling the pumplight at an angle with respect to the VCSEL. Typically this angle isless than 88 degrees.

The pump source can be a VBG or FBG stabilized laser, a discrete modelaser, a DFB laser, FP laser and/or DBR laser.

The pump source can also be a super luminescent diode (SLED).

The pump source can also be operated in coherence collapse.

In some modules, the pump light from the pump source is coupled to theVCSEL and a swept optical signal generated by the VCSEL separated usinga dichroic filter.

Amplifying the swept optical signal with an SOA is also a possibility.

The above and other features of the invention including various noveldetails of construction and combinations of parts, and other advantages,will now be more particularly described with reference to theaccompanying drawings and pointed out in the claims. It will beunderstood that the particular method and device embodying the inventionare shown by way of illustration and not as a limitation of theinvention. The principles and features of this invention may be employedin various and numerous embodiments without departing from the scope ofthe invention.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings, reference characters refer to the sameparts throughout the different views. The drawings are not necessarilyto scale; emphasis has instead been placed upon illustrating theprinciples of the invention. Of the drawings:

FIGS. 1A and 1B are schematic views showing two approaches, bydefocusing, for creating geometric isolation between the pump and theVCSEL in a tunable VCSEL swept source.

FIG. 2 is a top plan view of an optically pumped tunable VCSEL sweptsource module and also showing a third approach to geometric isolationwhereby the returning pump beam is offset and then possibly blocked.

FIG. 3 is a plot of various performance metrics against a common timescale in microseconds over the course of wavelength sweeps of the VCSEL,in which the clock plot 310 shows the k-clock sampling frequency overthe course of both VCSEL sweeps, the trigger plot 312 shows the triggervoltage for each of the two sweeps, the power plot 314 shows the poweroutput from the VCSEL, the first spectrogram plot 316 is a spectrogramof the optical power output from the 808 nanometer pump laser operatingin the coherence collapse regime with feedback from a fiber Bragggrating placed one meter away from the chip in the fiber, and the secondspectrogram plot 318 is a spectrogram of the optical power output of the808 nanometer pump laser operating in the coherence collapse regime witha fiber Bragg grating placed 0.14 meters away in the fiber.

FIGS. 4A and 4B are plan views of three different optically-pumpedtunable VCSEL swept source modules.

FIG. 5 is an exploded perspective view of a MEMS tunable VCSEL showingone example of the VCSEL 115 and its gain substrate 116.

FIG. 6 is a cross-section of the VCSEL of FIG. 5.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The invention now will be described more fully hereinafter withreference to the accompanying drawings, in which illustrativeembodiments of the invention are shown. This invention may, however, beembodied in many different forms and should not be construed as limitedto the embodiments set forth herein; rather, these embodiments areprovided so that this disclosure will be thorough and complete, and willfully convey the scope of the invention to those skilled in the art.

As used herein, the term “and/or” includes any and all combinations ofone or more of the associated listed items. Further, the singular formsand the articles “a”, “an” and “the” are intended to include the pluralforms as well, unless expressly stated otherwise. It will be furtherunderstood that the terms: includes, comprises, including and/orcomprising, when used in this specification, specify the presence ofstated features, integers, steps, operations, elements, and/orcomponents, but do not preclude the presence or addition of one or moreother features, integers, steps, operations, elements, components,and/or groups thereof. Further, it will be understood that when anelement, including component or subsystem, is referred to and/or shownas being connected or coupled to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent.

Unless otherwise defined, all terms (including technical and scientificterms) used. herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this invention belongs. It will befurther understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

In general, geometric isolation takes advantage of the alignment and/ordefocusing of the coupling optics between the pump and the VCSEL tosuppress the level of reflections that can couple back into the pumpchip. In the case of defocusing, it is helpful to note that the pumpspot size on the VCSEL and the mode size of the VCSEL cavity itself donot necessarily need to be the same. This allows the pump light to beslightly defocused on the VCSEL and consequently the fed back light isnot perfectly back-focused on the pump, This reduces the effectiveamount of fed back light.

FIG. 1A and 1B show two examples of geometric isolation by pumpdefocusing. The pump laser 110 is effectively a point source 114, Thepump light aperture 114 might be the pump chip exit facet or the opticalfiber that transmits the light from the pump chip to the lens train 122of the coupling optics. In either case, this pump light is defocused atthe gain substrate 116 of the VCSEL 115 by the coupling lens train 122of two lenses LensA and LensB.

In more detail, as shown in Fig, IA, light 112 from the pump 110diverges as it propagates away from the pump light aperture 114.

The pump light aperture 114 in one context is the exit facet of a pumpchip. One example chip is a single spatial mode, edge-emitting, ridgewaveguide GaAlAs or InGaAs chip.

In another context, the pump light aperture 114 is the exit facet of anoptical fiber, such as a single mode optical fiber, that carries lightfrom the pump chip to the lens train 122.

In both of these contexts, pump light aperture 114 approaches a pointsource, only having an extent of less than a few micrometers in diameterin many cases.

The diverging pump light 112 from the pump source 110 is relayed to thegain substrate 116 of the VCSEL 115 by the coupling lens train 122.Specifically, the pump light is collimated by first lens (LensA) andthen focused toward the surface 116S of the gain substrate 116 of theVCSEL 115 by a second lens (LensB).

The characteristics of the coupling lens train 122 such as the power ofthe first lens and the second lens at the wavelength of light of thepump source 110 along with the distances between the pump light aperture114, the first lens, the second lens, and the exit facet 118 areselected so that the focal point 120 of the pump light 112 is in frontof the proximal surface 116-S of the gain substrate 116 of the VCSEL115.

Arranging the coupling lens train 122 to focus the pump light 112 infront of the proximal surface of the gain substrate 116 of the VCSEL 115causes the reflected pump light 124 or pump light exiting the VCSEL 115to be defocused at the pump source 110.

FIG. 1B shows another arrangement of the coupling lens train 122. Inthis embodiment, the focal point 120 of the pump light 112 is behind thesurface 116S of the gain substrate 116 of the VCSEL 115.

In more detail, light 112 from the pump light source 110 diverges as itpropagates away from the pump light aperture 114.

The diverging pump light 112 from the pump source 110 relayed to thegain substrate 116 of the VCSEL 115 by the coupling lens train 122.

The characteristics of the coupling lens train 122 in this example suchas the power of the first lens and the second lens at the wavelength oflight of the pump source 110 along with the distances between the pumplight aperture 114, the first lens, the second lens, and the exit facet118 are selected so that the focal point 120 of the pump light 112 isbehind the proximal surface 116S of the gain substrate 116 of the VCSEL115.

Arranging the coupling lens train 122 to focus the pump light 112 behindthe proximal surface 116S of the gain substrate 116 of the VCSEL 115causes the returning pump light 124 from the VCSEL 115 to also bedefocused at the pump source 110.

In either example, because of pump light defocusing at the VCSCL gainsubstrate 116, the fed back beam does not focus to a point back at thepump source 110. This reduction in power density reduces the total powerof light destabilizing the pump.

This type of geometric isolation can be applied to more complicated beampaths that include mirrors, WDM couplers, and other optical elements.The essential part is the defocusing.

FIG. 2 shows how the coupling lens train 122, including Lens A and LensB are integrated into an optically pumped tunable VCSEL swept sourcemodule 100.

In one example, the VCSEL 115 is fabricated by bonding amicroelectro-mechanical system (MEMS) tunable mirror die 130 to theoptical gain/bottom mirror gain substrate 116. In the preferredembodiment, the VCSEL is as described in United States PatentApplication US2014/0176958A1, by Flanders, Kuznetsov, Atia, and Johnson,“OCT System with Bonded MEMS Tunable Mirror VCSEL Swept Source”, whichis incorporated herein in its entirety by this reference.

That said VCSELs with integrated MEMS tunable mirrors are anotheroption. An early example of such an integrated VCSEL is described inU.S. Pat. No. 6,645,784 by Tayebati, et al.

Nevertheless, almost any configuration of optically pumped VCSEL couldbe used.

A dichroic mirror (filter) allows separation of the VCSEL beam 134emitted by the VCSEL 115 from the pump light 112, 124.

In the illustrated embodiment, light from a pump chip 160 is coupled toa bench 140 via a pump optical fiber 142. The pump light 112 from theoptical fiber 142 is collimated by a first lens LensA. that is affixedto the bench 140. The pump light 112 then is transmitted through thedichroic mirror 132 and then focused by a second lens LensB onto thegain substrate 116 of the VCSEL 115.

Preferably, the bench 140, in turn, is installed in a hermetic package144 with optical fibers passing through fiber-feedthroughs 146, 148 ofthe package 144.

The dichroic mirror is reflective to longer wavelength of the VCSELlight 134, emitted by the VCSEL, but transmissive to the pump light 112,124 in the illustrated example. Specifically in the illustrated example,the tunable signal from the VCSEL 115 is reflected by the dichroicmirror 132, which is affixed to the bench 140, and directed to a foldmirror 150 which is also affixed to the bench 140 and then to a thirdlens 152, which is affixed to the bench 140. The third lens 152 focuseslight into an entrance aperture of an output optical fiber 154.

Even with very effective pump isolation, Faraday or geometric, pumps canbe noisy on their own. Amplitude noise, frequency noise, or jointamplitude/frequency noise can be a problem. Diode lasers, the mostpractical pump source, have natural amplitude and frequency noise drivenby spontaneous emission and shaped by relaxation oscillations [15].Fabry-Perot diode lasers can have mode hopping noise, Single frequencypumps, such as DFB (distributed feedback lasers), DBR (distributed Braggreflection lasers), and discrete mode lasers [16,17], can avoid thisissue. Volume Bragg grating stabilized lasers are another candidate[18,19,20].

Placing the pump in the coherence collapse regime of operation allowscontrol of the pump noise, if not eliminating it. Coherence collapse canbe induced by placing a reflector some distance from the laser diodechip to destabilize it in a controlled way [21]. Often this is done byplacing a fiber Bragg grating (FBG) 162 in the laser pigtail 142 [22].The FBG 162 limits laser emission to a narrow band of wavelengths andinduces coherence collapse which generates randomly phased modes c/(2L)apart, where c is the speed of light and L is the equivalent airdistance between the laser chip and the FBG. Beating between these modescreates amplitude noise bands spaced c/(2L) apart in RF frequency.Reducing L, as seen in FIG. 3, can shift and spread out the noise tocreate wide bands of low noise, and can be sufficient to eliminate thissource of noise from the detection bandwidth in many OCT applications.There is still noise in a narrow band around DC, but this may beacceptable in many cases.

FIG. 2 also shows another geometric isolation strategy. The VCSEL 115receives the pump beam 112 at an angle. The angle between the incidentand reflected pump beams must be greater than the divergence angle ofthe pump beam. Preferably the angle θ between the center axis of theincoming pump beam 112 and the proximal surface 1165 of the gainsubstrate 116 is less than 88 degrees, and preferably greater than 75degrees in the horizontal or vertical planes, or some hybrid plane,which angle is generally dictated by the aperture of the focusing lensLensB in front of the VCSEL. This is achieved by aligning Lens B so thatthe beam of pump light 112 is offset from the center of Lens B and alsooffset from the axis of the VCSEL light 134 exiting from the VCSEL 115.

With this configuration, the reflected beam 124 of pump light is nowdisplaced from the incoming beam 112. In the illustrated embodiment alight absorbing beam block substrate 170 is installed on the bench 140to intercept the reflected beam 124. This prevents feedback that willdestabilize the pump.

Here, a non-normal incidence angle of the incoming pump beam 112 intothe VCSEL 115 offsets the reflected beam 124 in space so that it can beblocked by a natural lens aperture or by the beam block 170intentionally inserted into the package and installed on the bench 140.In the case of single transverse mode source, fiber or laser, the offsetangle of the returning beam can prevent coupling of the returning light,even without a beam block or aperture. These methods prevent light frombeing feed back into the pump 160 and destabilizing it (making itnoisy).

The offset of the reflected beam 124 is controlled by precise control ofthe incidence angle θ of the incoming pump beam 112 focused into theVCSEL at the gain substrate 116. Here the pump 160 and any SOA areexternal to the integrated hermetic package 144 and connected throughoptical fibers 154, 142. In other schemes, either the pump or SOA orboth could be incorporated into the package 144 and still benefit fromuse of any of the three forms of geometric isolation. These ideas enablelow noise VCSEL pumping without the adoption of bulky, high-cost Faradayisolation.

FIG. 3 includes spectrograms showing how VCSEL, amplitude noise can betailored into wide, low noise bands by using a pump purposefully putinto a state of coherence collapse. Coherence collapse is induced byplacing a fiber Bragg grating (FBG) 162 into the pigtail 142 of the pumplaser 160. By shortening the fiber length, defining a secondary cavitybetween the pump chip 160 and FBG 162, to 0.14 meters, a 700 MHz widelow noise region is created that is wide enough for many OCTapplications. Generally, the secondary cavity should be equivalent toabout 0.3 meters in fiber or less, or 0.5 meters equivalent air path orless.

The FBG 162 in the pump pigtail 142 provides improved operation evenwhen imperfect geometric isolation is present. In this case, the FBGpump in coherence collapse improved stability. It does two things: Itchanges a popcorn-like noise process to a more smooth Gaussian-likeprocess. Then the short fiber length moves the noise bands out to n×700Hz. Unfortunately there is still noise near DC, but it is easier to dealwith.

FIGS. 4A and 4B show two additional optical layouts or optically-pumpedtunable VCSEL swept source modules with various levels of co-packageintegration.

FIG. 4A shows an optically-pumped tunable VCSEL swept source module withan amplification stage.

In more detail, the pump light is received into the hermetic package 144and onto the bench 140 from a separately packaged pump laser 160. Thepump's pigtail 142 is received through a feedthrough 146 in the package144 and its end is secured down onto the bench 140 by a fiber mountingstructure FL1. The fiber mounting structure FLI is preferably a fiberLIGA fiber holder (LIGA=Lithographic, Galvanoformung, Abformung (inEnglish: Lithography, Electroplating, and Molding)).

Coherence collapse pumping is possible in this version by adding a fiberBragg grating to the pigtail 142.

The pump light is transmitted through the angled WDM filter/dichroicmirror 132. and transmitted through the tunable mirror of theMEMStunable mirror die 130. The light is focused onto the proximalsurface 116S of the gain substrate 116 by the Lens B.

In terms of coupling the pump light into the gain substrate 116 any ofthe three previous techniques can be employed. The pump light can bedefocused in front of the proximal surface 116S as shown in FIG. 1A; thepump light can be defocused behind the proximal surface 116S as shown inFIG. 1B; or the pump light coupled into the gain substrate at an angle,displaced from the center axis of Lens B as described in connection withFIG. 2,

The dichroic mirror 132 reflects the VCSEL light 134, emitted by theVCSEL. The tunable signal from the VCSEL 115 is reflected by thedichroic mirror 132, which is affixed to the bench 140, and directed tothe fold minor 150 which is also affixed to the bench 140.

The VCSEL light is then directed to pass through an isolator 180 thatprevents backreflections. After the isolator, a focusing lens 186couples the VCSEL light into an SOA 182 mounted to a submount 184, whichin turn is mounted to the bench 140. At the output side of the SOA 182,the amplified VCSEL light is focused by an output focusing lens 188 tocouple the light into an output fiber pigtail 154 secured to the benchby a second fiber mounting structure FL2.

FIG. 413 shows another optically-pumped tunable VCSEL swept sourcemodule with an amplification stage. It is similar in construction andoperation to the embodiment shown in FIG. 4A, so that explanationapplies here.

The difference is that the pump 160 is integrated onto the bench 140 andin the package 144. Specifically, a pump chip 190 is mounted to a pumpsubmount 192, which in turn is mounted to the bench.

It should be noted that even with very effective pump isolation, Faradayor geometric, pumps can be noisy on their own. Amplitude noise,frequency noise, or joint amplitude/frequency noise can be a problem.Diode lasers as describe above, the most practical pump source, havenatural amplitude and frequency noise driven by spontaneous emission andshaped by relaxation oscillations [15]. Fabry-Perot diode lasers canhave mode hopping noise. Single frequency pumps, such as DFB(distributed feedback lasers), DBR (distributed Bragg reflectionlasers), and discrete mode lasers [16,17], can avoid this issue. VolumeBragg grating stabilized lasers are another candidate [18,19,20].

Thus, in one implementation, a volume Bragg grating (VBG) 194 addedbetween the pump chip 190 and the dichroic mirror 132. Specifically, theVBG could be added before lens L4 in the diverging beam, or after lensL4 in the collimated beam, as shown.

Alternatively, the VBG, appropriately angled, could also be added as anintegral part of the WDM dichroic mirror 132. This last configurationwould require fabricating the VBG inside the WDM substrate with anappropriate angle for the non-normal angle of incidence. The VBG couldalso be fabricated as integral part of the first coupling lens LensA(for example GRIN lens, glass asphere lens) in the optical train 122, asa means to reduce the optical cavity lengths (allows for wider spacingof the longitudinal modes which is more favorable for wavelengthstabilization) and to reduce the overall size of the assembly.

There are many packaging configurations that could make use of theseideas for low-noise optical pumping of a tunable VCSEL. The key ideasare (1) geometric pump isolation, (2) single-frequency pumping (withDFB, DBR, discrete mode, or VBG-stabilized lasers), (3) broad bandpumping with a SLED, (4) pumping with an FBG stabilized laser incoherence collapse, and (5) pumping with a standard pigtailed laser(without FBG) in coherence collapse due to a small feedback from theVCSEL.

FIG. 5 shows one exemplary MEMS tunable VCSEL 115 for inclusion in theoptically pumped tunable VCSEL swept source module 100 described above.

The MEMS tunable VCSEL 115 comprises the MEMS tunable mirror die ordevice 130 that is bonded to the optical gain/bottom mirror gainsubstrate 116, also known as a. half VCSEL.

In more detail, the MEMS tunable mirror 130 comprises handle wafermaterial 210 that functions as a support. Currently, the handle is madefrom doped silicon.

An optical membrane or device layer 212 is added to the handle wafermaterial 210. Typically silicon on isolator (SOI) wafers are used. Themembrane structure 214 is formed in this optical membrane layer 212. Inthe current implementation, the membrane layer 212 is silicon that islow doped with resistivity >1 ohm-cm, carrier concentration <5×1015cm-3, to minimize free carrier absorption of the transmitted light. Forelectrical contact, the membrane layer surface is usually additionallydoped with ion implantation.

During manufacture, the insulating layer 216 functions as asacrificial/release layer, which is partially removed to release themembrane structure 214 from the handle wafer material 210. Then duringoperation, the remaining portions of the insulating layer 216 provideelectrical isolation between the patterned device layer 212 and thehandle material 210.

In the current embodiment, the membrane structure 214 comprises a bodyportion 218. The optical axis of the device 115 passes concentricallythrough this body portion 218 and orthogonal to a plane defined by themembrane layer 212. A diameter of this body portion 218 is preferably300 to 600 micrometers; currently it is about 500 micrometers.

Tethers 220 (four tethers in the illustrated example) are defined byarcuate slots 225 fabricated into the device layer 212. The tethers 220extend radially from the body portion 218 to an outer portion 222, whichcomprises the ring where the tethers 220 terminate. In the currentembodiment, a spiral tether pattern is used.

A membrane mirror dot 250 is disposed on body portion 218 of themembrane structure 214. In some embodiments, the membrane mirror 250 isoptically curved to form an optically concave optical element to therebyform a curved mirror laser cavity, In other cases, the membrane mirror250 is a flat mirror, or even possibly convex.

When a curved membrane mirror 250 is desired, this curvature can becreated by forming a depression in the body portion 218 and thendepositing the material layer or layers that form mirror 250 over thatdepression. In other examples, the membrane mirror 250 can be depositedwith a high amount of compressive material stress that will result inits curvature.

The membrane mirror dot 250 is preferably a reflecting dielectric mirrorstack. In some examples, it is a dichroic mirror-filter that provides adefined reflectivity, such as between 1 and 10%, to the wavelengths oflaser light generated in the VCSEL 115, whereas the optical dot 250 istransmissive to wavelengths of the pump light 112 that are used tooptically pump the active region in the half VCSEL device 116.

In the illustrated embodiment, three metal pads 234 are deposited on theproximal side of the membrane device 110. These are used to solder orthermocompression bond, for example, the half VCSEL device 116 onto theproximal face of the membrane device 130. The top pad also provides anelectrical connection to the half VCSEL device 116.

Also provided are three wire bondpads 334A, 334B, and 334C. The leftVCSEL electrode wire bond pad 334A is used to provide an electricalconnection to the metal pads 234. On the other hand, the right membranewire bond pad 234B is used to provide an electrical connection to themembrane layer 212 and thus the membrane structure 214. Finally, thehandle wire bond pad 334C is used to provide an electrical connection tothe handle wafer material 210.

The half VCSEL device 116 generally comprises an antireflective coating414, which is optional, and an active region 418, which preferably has asingle or multiple quantum well structure. The cap layer can be usedbetween the antireflective coating 414, if present, and the activeregion 418. The cap layer protects the active region from thesurface/interface effects at the interface to the AR coating and/or air.The back mirror 416 of the laser cavity is defined by a distributedBragg reflector (DEM) mirror. Finally, a VCSEL spacer 415, such as GaAS,functions as a substrate and mechanical support.

The material system of the active region 418 of the VCSEL device 116 isselected based on the desired spectral operating range. Common materialsystems are based on III-V semiconductor materials, including binarymaterials, such as GaN, GaAs, InP, GaSb, InAs, as well as ternary,quaternary, and pentenary alloys, such as InGaN, InAlGaN, InGaP, AlGaAs,InGaAs, GaInNAs, GaInNAsSb, AlInGaAs, InGaAsP, AlGaAsSb, AlGaInAsSb,AlAsSb, InGaSb, InAsSb, and InGaAsSb. Collectively, these materialsystems support operating wavelengths from about 400 nanometers (nm) to2000 nm, including longer wavelength ranges extending into multiplemicrometer wavelengths. Semiconductor quantum well and quantum dot gainregions are typically used to obtain especially wide gain and spectralemission bandwidths.

In the preferred embodiment, the polarization of the light generated bythe MEMS tunable VCSEL 115 is preferably controlled and at leaststabilized. In general, this class of devices has a cylindricalresonator that emits linearly polarized light. Typically, the light ispolarized along the crystal directions with one of those directionstypically being stronger than the other. At the same time, the directionof polarization can change with laser current or pumping levels, and thebehaviors often exhibit hysteresis.

Different approaches can be taken to control the polarization. In oneembodiment, polarization selective mirrors are used. In another example,non-cylindrical resonators are used. In still a further embodiment,asymmetrical current injection is used when electrical pumping isemployed. In still other examples, the active region substrate includestrenches or materials layers, which result in an asymmetric stress,strain, heat flux or optical energy distribution, are used in order tostabilize the polarization along a specified stable polarization axis.In still a further example, asymmetric mechanical stress is applied tothe VCSEL device 116.

Defining the other end of the laser cavity is the rear mirror 416 thatis formed in the half VCSEL device 116. In one example, this is a layeradjacent to the active region 418 that creates the refractive indexdiscontinuity that provides for a portion of the light to be reflectedback into the cavity, such as between one and 10%. In other examples,the rear mirror 116 is a high reflecting layer that reflects over 90% ofthe light back into the laser cavity.

In still other examples, the rear VCSEL distributed Bragg reflector(DBR) minor 416 is a dichroic mirror-filter that provides a definedreflectivity, such as between 1 and 100%, to the wavelengths of laserlight generated in the laser 115, whereas the rear mirror 116 istransmissive to wavelengths of light that are used to optically pump theactive region in the VCSEL device 116, thus allowing the VCSEL device112 to function as an input port of pump light.

FIG. 6 schematically shows the MEMS tunable VCSEL 100 in cross-sectionalong A-A to show a proximal-side electrostatic cavity and a distal-sideelectrostatic cavity 224.

An optical port 240 through handle wafer material 210 has generallyinward sloping sidewalls 244 that end in the port opening 246. As aresult, looking through the distal side of the handle wafer 210, thebody portion 218 of the membrane structure 214 is observed. The port ispreferably concentric with the membrane mirror dot 250. Further, thebackside of the body portion 218 is coated with a membrane backside ARcoating 119 in some examples. This AR. coating 119 is used to facilitatethe coupling of pump light 112 into the laser cavity and/or the couplingof laser light 134 out of the cavity

The thickness of insulating layer 216 defines the electrostatic cavitylength of the distal-side electrostatic cavity 224. Presently, theinsulating layer 216 is between 3.0 and 6.0 μm thick. It is a generalrule of thumb, that electrostatic elements can be tuned over no greaterthan one third the distance of the electrostatic cavity. As result, thebody portion 218, and thus the mirror optical coating 230 can bedeflected between 1 and 3 μm in the distal direction (i.e., away fromthe VCSEL device 112), in one embodiment.

Also shown are details concerning how the half VCSEL device 116 isbonded to the membrane device 130. The MEMS device bond pads 234 bond toVCSEL proximal-side electrostatic cavity electrode metal 422. Thesemetal layers are electrically isolated. Specifically, the MEMS devicebond pads 234 are separated from the membrane layer 212 by MFMS devicebond pad isolation oxide 236; the VCSEL proximal-side electrostaticcavity electrode metal 422 is isolated from the remainder of the VCSELdevice by the VCSEL isolation oxide layer 128. Neither of the VCSELproximal-side electrostatic cavity electrode metal 422 nor the VCSELisolation oxide layer 128 interfere with the optical operation sincethey do not extend into the region of the free-space portion 252 of thelaser's optical cavity.

The distal-side electrostatic cavity 224 and the proximal-sideelectrostatic cavity 226 are located on either side of the membranestructure 214. Specifically, the distal-side electrostatic cavity 224 iscreated between the handle wafer material 210 and the membrane structure214, which is the suspended portion of the membrane layer 212. A voltagepotential between the handle wafer material 210 and the membrane layer212 will generate an electrostatic attraction between the layers andpull the membrane structure 214 toward the handle wafer material 210. onthe other hand, the proximal-side electrostatic cavity 226 is createdbetween the membrane structure 214 and the VCSEL proximal-sideelectrostatic cavity electrode metal 422. A voltage potential betweenthe membrane layer 212 and the VCSEL proximal-side electrostatic cavityelectrode metal 422 will generate an electrostatic attraction betweenthe layers and pull the membrane structure 214 toward the VCSEL device112.

In general, the size of the proximal-side electrostatic cavity 226measured along the device's optical axis is defined by the bond metalthickness, thickness of VCSEL proximal-side electrostatic cavityelectrode metal 422 and MEMS device bond pads 234 along with thethicknesses VCSEL isolation oxide layer 128 and MEMS device bond padisolation oxide 236.

The minimum oxide thickness is determined by the required voltageisolation. Oxide break down is nominally 1000V/micrometer. So, for 200Visolation that would be 2000A, which is preferably doubled for margin.So the thickness of layers VCSEL isolation oxide layer 128 and MEMSdevice bond pad isolation oxide 236 is greater than 4000 A.

The current metal bond thickness is 6000 A (each layer) with approx.3000 A compression during bonding. Based on this, the minimum size ofthe proximal-side electrostatic cavity 226 is 0.85 micrometers.

At this minimum electrostatic gap point, a zero optical gap results whenthe membrane mirror dot 250 is 1.7 micrometers thick.

To increase the optical gap, the thickness of the VCSEL isolation oxidelayer 128 can be increased without effecting the operation of thecavity.

It should be noted that in the defocus methods of pump isolationdiscussed with respect to FIGS. 1A and 1B, the defocusing is withrespect to the surface 116S of the gain substrate or half VCSEL 116. Thelocation of this internal surface is best shown in FIG. 6,

In a similar vein, pump beam 112 angle θ is measured with respect to thesurface 116S, shown in FIG. 6.

REFERENCES

[1] B. Potsaid, V. Jayaraman, J. G. Fujimoto, J. Jiang, P. J. S. Heim,A. E. Cable, “MEMS tunable VCSEL light source for ultrahigh speed 60kHz-1 MHz axial scan rate and long range centimeter class OCT imaging”,Proc. of SPIE, 8213, 82130M-1/8, (2012)

[2] D. D. John, C. B. Burgner, B. Potsaid, M. E. Robertson, B. Lee, W.J. Choi, A. E. Cable, J. G. Fujimoto, and V. Jayaraman, “Widebandelectrically-pumped 1050 nm MEMS-tunable VCSEL for ophthalmic imaging,”J. Lightwave Technol. 33, 3461-3468 (2015)

[3] Z. Wang, B. Potsaid, L. Chen, C. Doerr, H-C. Lee, T. Nielson, V.Jayaraman, A. E. Cable, E. Swanson, and J. G. Fujimoto, “Cubic metervolume optical coherence tomography”, Optica, 3, 1496-1503 (2016)

[4] B. Johnson, W. Atia, M. Kuznetsov, B. D. Goldberg, P. Whitney, andD. C. Flanders, “Coherence properties of short cavity swept lasers,”Biomed. Opt. Express 8, 1045-1055 (2017)

[5] Y. Matsui, D. Vakhshoori, P. Wang, P. Chen, C-C. Lu, M. Jiang Knopp,S. Burroughs, and P. Tayebati, “Complete Polarization Mode Control ofLong-Wavelength Tunable Vertical-Cavity Surface-Emitting Lasers Over65-nm Tuning, Up to 4-mW Output Power”, IEEE J. Quantum Electronics, 39,1037-1048 (2003)

[6] Y. Rao, W. Yang, C. Chase, M. C. Y. Huang, D. P. Worland, S.Khaleghi, M. R. Chitgarha., M. Ziyadi, A. E. Willner, and C. J.Chang-Hasnain, “Long-Wavelength VCSEL Using High-Contrast Grating”, IEEEJ. Selected Topics in Quantum Electronics, 19, 1701311-1701311 (2013)

[7] Bandwidth10, Inc. tunable VCSELs, http://www.bandwidth10.com/

[8] D. D. John, B. Lee, B. Potsaid, A. C. Kennedy, M. F. Robertson, C.B. Burgner, A. E. Cable, J. G. Fujimoto, and V. Jayaraman, “Single-Modeand High-Speed 850 nm MEMS-VCSEL,” in Lasers Congress 2016, OSATechnical Digest (Optical Society of America, 2016), paper ATh5A.2

[9] V. Jayaraman, J. Jiang, B. Potsaid, M. Robertson, P. J. S. Heim, C.Burgner, D. John, G. D. Cole, I. Grulkowski, J. G. Fujimoto, A. M.Davis, and A. E. Cable, “VCSEL Swept Light Sources”, 659-686, in OpticalCoherence Tomography, W. Drexler, J. G. Fujimoto (eds), SpringerInternational Publishing Switzerland 2015

[10] V. Jayaraman, D. D. John, C. Burgner, M. E. Robertson, B. Potsaid,Jiang, T. H. Tsai, W. Choi, C. D. Lu, P. J. S. Heim, J. G. Fujimoto, andA. E. Cable, “Recent Advances in MEMS-VCSELs for High PerformanceStructural and Functional SS-OCT Imaging”, Proc. of SPIE 8934,893402-1/11 (2014)

[11] Thorlabs 1310 rim MFMS-VCSEL swept laser:haps://www.thorlabs.com/newgrouppage9.cfm?objectgroup id=7109

[12] V. Jayaraman, G. D. Cole, M. Robertson, A. Uddin and A. Cable,“High-sweep-rate 1310 nm MEMS-VCSEL with 150 nm continuous tuningrange,” Electronics Letters, 48, 867-869 (2012)

[13] V. Jayaraman, G. D. Cole, M. Robertson, C. Burgner, D. John, A.Uddin and A. Cable, “Rapidly swept, ultra-widely-tunable 1060 nmMEMS-VCSELs”, Electronics Letters, 48, 1331-1333 (2012)

[14] I. Grulkowski, J. J. Liu, B. Potsaid, V. Jayaraman, C. D. Lu, J.Jiang, A. E. Cable, J. S. Luker, and J. G. Fujimoto, “Retinal, anteriorsegment and full eye imaging using ultrahigh speed swept source OCT withvertical-cavity surface emitting lasers,” Biomed. Opt. Express 3,2733-2751 (2012)

[15] L. A. Coldren and S. W. Corzine, Diode lasers and photonicintegrated circuits, Chapter 5, John Wiley & Sons, Inc. 1995

[16] Eblana Photonics.http://www.eblanaphotonics.com/news-and-events.php

[17] J. O'Carroll, R. Phelan, B. Kelly, D. Byrne, L. P. Barry, and J.O'Gorman. “Wide temperature range 0<T<85° C. narrow linewidth discretemode laser diodes for coherent communications applications”, OpticsExpress, 19, B90-B95 (2011)

[18] H. Wenzel, K. Hausler, G. Blume, J. Fricke, M. Spreemann, M. Zorn,and G. Erbert, “High-power 808 nm ridge-waveguide diode lasers with verysmall divergence, wavelength-stabilized by an external volume Bragggrating”, Optics Letters, 34, 1627-1629 (2009)

[19] Ondax, :Inc.http://www.ondax.com/downloads/surelock/Laser-Selector-Guide-2.pdf

[20] Laser Components, Inc.haps://www.lasercomponents.com/fileadmin/user_upload/home/Datasheets/pd_Id/luxxmaster_785nm_butterfly.pdf

[21] Q. Zou and S. Azouigui, “Analysis of Coherence-Collapse Regime ofSemiconductor Lasers Under External Optical Feedback by PerturbationMethod”, Chapter 5 in Semiconductor Laser Diode Technology andApplications, Edited by Dnyaneshwar Patil, open accesshttps://www.intechopen.com/books/semiconductor-laser-diode-technology-and-applications

[22] Lumics GmbH. 808 nm pump laser with FBG option:http://www.lumics.de/wp-content/uploads/LU0808M250.pdf

[23] Fiber Optic Test and Measurement, Dennis Derickson, Editor,Prentice Hall, 1998, p. 602, section entitled “Special Case for ASESources”

[24] United States Patent Application US20140176958A1, D. C. Flanders,M. E. Kuznetsov, W. A. Atia, B,C. Johnson, “OCT System with Bonded MEMSTunable Mirror VCSEL Swept Source”, Priority date 2012-12-21

While this invention has been particularly shown and described withreferences to preferred embodiments thereof, it will be understood bythose skilled in the art that various changes in form and details may bemade therein without departing from the scope of the inventionencompassed by the appended claims.

What is claimed is:
 1. An optically pumped tunable vertical cavitysurface emitting laser (VCSEL) swept source module, comprising: atunable VCSEL; a lens for collimating a VCSEL beam emitted by the VCSEL;and a pump for producing pump light to pump the VCSEL, wherein the pumpis geometrically isolated from the VCSEL by coupling the pump light fromthe pump at an angle with respect to the VCSEL through the lens.
 2. Themodule of claim 1, wherein the angle is less than 88 degrees.
 3. Themodule of claim 1, wherein the angle is less than 80 degrees.
 4. Themodule of claim 1, wherein the angle is greater than 75 degrees.
 5. Themodule of claim 1, wherein the pump is a VBG or FBG stabilized laser, adiscrete mode laser, a DFB laser, FP laser and/or DBR laser.
 6. Themodule of claim 1, further comprising a dichroic filter.
 7. The moduleof claim 1, wherein the dichroic filter transmits light from the pumpand reflects the VCSEL beam from the VCSEL.
 8. The module of claim 1,further comprising an SOA for amplifying the VCSEL beam.
 9. The moduleof claim 1, further comprising a beam block for intercepting pump lightreflected by the tunable VCSEL.
 10. The module of claim 1, furthercomprising an integrated dichroic filter, an SOA, and an isolator.
 11. Amethod for optically pumping a VCSEL, comprising: producing pump lightwith a pump source; coupling the pump light into the VCSEL from the pumpsource; and preventing the pump light from being coupled back into thepump source by geometric isolation by coupling the pump light at anangle with respect to the VCSEL.
 12. The method of claim 11, wherein theangle is less than 88 degrees.
 13. The method of claim 11, wherein thepump source is a VBG or FBG stabilized laser, a discrete mode laser, aDFB laser, FP laser and/or DBR laser.
 14. The method of claim 11,further comprising coupling the pump light from the pump source to theVCSEL and coupling a swept optical signal generated by the VCSEL via thesame lens.
 15. The method of claim 11, further comprising coupling thepump light from the pump source to the VCSEL and separating out a sweptoptical signal generated by the VCSEL using a dichroic filter.
 16. Anoptically pumped tunable vertical cavity surface emitting laser (VCSEL)swept source module, comprising: a tunable VCSEL; a pump for producinglight to pump the VCSEL, wherein is a discrete mode laser.
 17. Themodule of claim 16, wherein the pump is a. distributed feedback laser.18. The module of claim 16, wherein the pump is a distributed Braggreflector laser.